Rochester Electronics / NTHD4P02FT1

Image is for reference, please contact us to get the real picture

REMARK: Buy the NTHD4P02FT1 Rochester Electronics on xunyun-ic.com, we are Rochester Electronics Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the NTHD4P02FT1 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	155mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.1W (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ChipFET™
Package / Case	8-SMD, Flat Lead

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 20955

Minimum: 1

Call for price or sumbit a RFQ

Popular Models

	SCTW35N65G2V STMicroelectronics
	SI2304BDS-T1-E3 Vishay / Siliconix
	BUK9518-55,127 NXP Semiconductors
	SSM3K15ACTC,L3F Toshiba Electronic Devices and Storage Corporation
	IRF520PBF-BE3 Vishay / Siliconix
	MCH3484-TL-W Sanyo Semiconductor/ON Semiconductor
	SIE822DF-T1-GE3 Vishay / Siliconix
	RSQ035N03TR ROHM Semiconductor
	2SK1119(F) Toshiba Electronic Devices and Storage Corporation
	IPA65R190CFDXKSA1 IR (Infineon Technologies)