Toshiba Electronic Devices and Storage Corporation / 2SK1119(F)

Manufacturer Part Number: 2SK1119(F)
Manufacturer: Toshiba Electronic Devices and Storage Corporation
Part of Description: MOSFET N-CH 1000V 4A TO220AB
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 2056 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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