Rochester Electronics / NDH832P

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Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Rds On (Max) @ Id, Vgs	60mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 4.5 V
Vgs (Max)	-8V
Input Capacitance (Ciss) (Max) @ Vds	1 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-8
Package / Case	8-LSOP (0.130", 3.30mm Width)

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

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