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Manufacturer Part Number: | BSZ12DN20NS3GATMA1 |
Manufacturer: | IR (Infineon Technologies) |
Part of Description: | MOSFET N-CH 200V 11.3A 8TSDSON |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 2804 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | OptiMOS™ |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 125mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8 |
Package / Case | 8-PowerTDFN |