Toshiba Electronic Devices and Storage Corporation / TK39J60W,S1VQ

Manufacturer Part Number: TK39J60W,S1VQ
Manufacturer: Toshiba Electronic Devices and Storage Corporation
Part of Description: MOSFET N-CH 600V 38.8A TO3P
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 2874 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)270W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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