Toshiba Electronic Devices and Storage Corporation / TK39J60W,S1VQ

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Manufacturer Part Number:	TK39J60W,S1VQ
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Part of Description:	MOSFET N-CH 600V 38.8A TO3P
Lead Free Status / RoHS Status:	Lead Free / RoHS Compliant
Stock Condition:	1539 In Stock
Ship From:	Hong Kong
Shipment Way:	DHL/Fedex/TNT/UPS/EMS

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Type	Description
Series	DTMOSIV
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
FET Feature	Super Junction
Power Dissipation (Max)	270W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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