Rochester Electronics / PH2520U,115

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Type	Description
Series	*
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.7mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	5.85 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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