Microsemi / APTSM120AM25CT3AG

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	148A (Tc)
Rds On (Max) @ Id, Vgs	25mOhm @ 80A, 20V
Vgs(th) (Max) @ Id	3V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	544nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	10200pF @ 1000V
Power - Max	937W
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP3
Supplier Device Package	SP3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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