ROHM Semiconductor / BSM600D12P3G001

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	600A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	31000pF @ 10V
Power - Max	2450W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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