GeneSiC Semiconductor / MBR200200CTR

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Type	Description
Series	-
Package	Bulk
Part Status	Active
Diode Configuration	1 Pair Common Anode
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	200 V
Current - Average Rectified (Io) (per Diode)	100A
Voltage - Forward (Vf) (Max) @ If	920 mV @ 100 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	3 mA @ 200 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Supplier Device Package	Twin Tower

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

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