GeneSiC Semiconductor / MBR35100R

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Type	Description
Series	-
Package	Bulk
Part Status	Active
Diode Type	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io)	35A
Voltage - Forward (Vf) (Max) @ If	840 mV @ 35 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	1.5 mA @ 20 V
Capacitance @ Vr, F	-
Mounting Type	Chassis, Stud Mount
Package / Case	DO-203AA, DO-4, Stud
Supplier Device Package	DO-4
Operating Temperature - Junction	-55°C ~ 150°C

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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