Microsemi / APTM100DA18CT1G

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Type	Description
Series	POWER MOS 8™
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	216mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	570 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	14800 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	657W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SP1
Package / Case	SP1

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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