ROHM Semiconductor / R6015ANZFU7C8

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Type	Description
Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	4.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1.7 nF @ 25 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3
Package / Case	TO-3P-3 Full Pack

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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