IR (Infineon Technologies) / IPA052N08NM5SXKSA1

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Type	Description
Series	OptiMOS™5
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	3.8V @ 65µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3800 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	38W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220 Full Pack
Package / Case	TO-220-3 Full Pack

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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