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Manufacturer Part Number: | SIA456DJ-T3-GE3 |
Manufacturer: | Vishay / Siliconix |
Part of Description: | MOSFET N-CH 200V 1.1A/2.6A PPAK |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 4235 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta), 2.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 1.38Ohm @ 750mA, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Package / Case | PowerPAK® SC-70-6 |