NXP Semiconductors / PDTB123ES,126

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Type	Description
Series	-
Package	Tape & Box (TB)
Part Status	Obsolete
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	500 mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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