Rochester Electronics / NTMD4N03R2

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Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4A
Rds On (Max) @ Id, Vgs	60mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 20V
Power - Max	2W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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