Rochester Electronics / PMDPB28UN,115

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Type	Description
Series	TrenchMOS™
Package	Bulk
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.6A (Ta)
Rds On (Max) @ Id, Vgs	37mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 10V
Power - Max	510mW (Ta), 8.33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Supplier Device Package	6-HUSON-EP (2x2)

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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