Rochester Electronics / EFC6602R-TR

Manufacturer Part Number: EFC6602R-TR
Manufacturer: Rochester Electronics
Part of Description: POWER FIELD-EFFECT TRANSISTOR
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 4475 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the EFC6602R-TR Rochester Electronics on xunyun-ic.com, we are Rochester Electronics Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the EFC6602R-TR within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Specification

TypeDescription
Series-
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Rds On (Max) @ Id, Vgs5.9mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-XFBGA, WLCSP
Supplier Device Package6-WLCSP (1.81x2.7)
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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