IR (Infineon Technologies) / FF08MR12W1MA1B11ABPSA1

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Type	Description
Series	CoolSiC™
Package	Tray
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	150A (Tj)
Rds On (Max) @ Id, Vgs	9.8mOhm @ 150A, 15V
Vgs(th) (Max) @ Id	5.55V @ 90mA
Gate Charge (Qg) (Max) @ Vgs	15V
Input Capacitance (Ciss) (Max) @ Vds	600V
Power - Max	20mW (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-EASY1BM-2

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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