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Manufacturer Part Number: | NTMFD4C85NT1G |
Manufacturer: | Rochester Electronics |
Part of Description: | POWER FIELD-EFFECT TRANSISTOR |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 183040 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | - |
Package | Bulk |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 15.4A, 29.7A |
Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 15V |
Power - Max | 1.13W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | 8-DFN (5x6) |