IR (Infineon Technologies) / BSG0813NDIATMA1

Manufacturer Part Number: BSG0813NDIATMA1
Manufacturer: IR (Infineon Technologies)
Part of Description: MOSFET 2N-CH 25V 19A/33A TISON8
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 4420 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
Series-
PackageTape & Reel (TR)
Part StatusActive
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C19A, 33A
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 12V
Power - Max2.5W
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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