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Manufacturer Part Number: | BSO615NGHUMA1 |
Manufacturer: | IR (Infineon Technologies) |
Part of Description: | MOSFET 2N-CH 60V 2.6A 8SOIC |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 3556 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | SIPMOS® |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.6A |
Rds On (Max) @ Id, Vgs | 150mOhm @ 2.6A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | PG-DSO-8 |