IR (Infineon Technologies) / BSO615NGHUMA1

Manufacturer Part Number: BSO615NGHUMA1
Manufacturer: IR (Infineon Technologies)
Part of Description: MOSFET 2N-CH 60V 2.6A 8SOIC
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 2833 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesSIPMOS®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.6A
Rds On (Max) @ Id, Vgs150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackagePG-DSO-8
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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