IR (Infineon Technologies) / IPG20N10S4L35ATMA1

Manufacturer Part Number: IPG20N10S4L35ATMA1
Manufacturer: IR (Infineon Technologies)
Part of Description: MOSFET 2N-CH 8TDSON
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 14427 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1105pF @ 25V
Power - Max43W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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