NXP Semiconductors / J175,116

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Type	Description
Series	-
Package	Tape & Box (TB)
Part Status	Obsolete
FET Type	P-Channel
Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	7 mA @ 15 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds	8pF @ 10V (VGS)
Resistance - RDS(On)	125 Ohms
Power - Max	400 mW
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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