GeneSiC Semiconductor / GC10MPS12-220

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Type	Description
Series	-
Package	Tube
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	54A (DC)
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	10 µA @ 1200 V
Capacitance @ Vr, F	660pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2
Operating Temperature - Junction	-55°C ~ 175°C

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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