Rochester Electronics / FCP850N80Z

Manufacturer Part Number: FCP850N80Z
Manufacturer: Rochester Electronics
Part of Description: POWER FIELD-EFFECT TRANSISTOR, N
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 10025 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesSuperFET® II
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.315 pF @ 100 V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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