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Manufacturer Part Number: | SIS410DN-T1-GE3 |
Manufacturer: | Vishay / Siliconix |
Part of Description: | MOSFET N-CH 20V 35A PPAK 1212-8 |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 144503 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8 |
Package / Case | PowerPAK® 1212-8 |