Rochester Electronics / BSL802SNL6327HTSA1

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Type	Description
Series	OptiMOS™
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
Rds On (Max) @ Id, Vgs	22mOhm @ 7.5A, 2.5V
Vgs(th) (Max) @ Id	750mV @ 30µA
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 2.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1347 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSOP-6-6
Package / Case	SOT-23-6 Thin, TSOT-23-6

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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