Rochester Electronics / PMZB790SN,315

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Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	650mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	940mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.37 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	35 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	360mW (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006B-3
Package / Case	3-XFDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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