IR (Infineon Technologies) / IRLU3636PBF

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Type	Description
Series	HEXFET®
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 4.5 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3779 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	143W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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