Rochester Electronics / IPN50R800CEATMA1

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Type	Description
Series	CoolMOS™ CE
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	5W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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