Rochester Electronics / AUIRF7732S2TR

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.95mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.7 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 41W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ SC
Package / Case	DirectFET™ Isometric SC

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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