ROHM Semiconductor / R6025JNZ4C13

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Type	Description
Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	182mOhm @ 12.5A, 15V
Vgs(th) (Max) @ Id	7V @ 4.5mA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 15 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	306W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247G
Package / Case	TO-247-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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