IR (Infineon Technologies) / BSC010NE2LSIATMA1

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REMARK: Buy the BSC010NE2LSIATMA1 IR (Infineon Technologies) on xunyun-ic.com, we are IR (Infineon Technologies) Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the BSC010NE2LSIATMA1 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	OptiMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.05mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4200 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 96W (Tc)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-7
Package / Case	8-PowerTDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

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