Vishay / Siliconix / SISS02DN-T1-GE3

Manufacturer Part Number: SISS02DN-T1-GE3
Manufacturer: Vishay / Siliconix
Part of Description: MOSFET N-CH 25V 51A/80A PPAK
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 1314 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the SISS02DN-T1-GE3 Vishay / Siliconix on xunyun-ic.com, we are Vishay / Siliconix Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the SISS02DN-T1-GE3 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Specification

TypeDescription
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C51A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds4450 pF @ 10 V
FET Feature-
Power Dissipation (Max)5W (Ta), 65.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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