Rochester Electronics / IPD65R950CFDATMA1

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Type	Description
Series	CoolMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	14.1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	36.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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