Rochester Electronics / NVGS3441T1G

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.65A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	480 pF @ 5 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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