Rochester Electronics / BTS115ANKSA1

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Type	Description
Series	TEMPFET®
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	120mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	735 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	P-TO220AB
Package / Case	TO-220-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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