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Manufacturer Part Number: | IMW120R090M1HXKSA1 |
Manufacturer: | IR (Infineon Technologies) |
Part of Description: | SICFET N-CH 1.2KV 26A TO247-3 |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 202 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | CoolSiC™ |
Package | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1.2 kV |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Rds On (Max) @ Id, Vgs | 117mOhm @ 8.5A, 18V |
Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 18 V |
Vgs (Max) | +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds | 707 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 115W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3-41 |
Package / Case | TO-247-3 |