Rochester Electronics / FQI27N25TU

Manufacturer Part Number: FQI27N25TU
Manufacturer: Rochester Electronics
Part of Description: POWER FIELD-EFFECT TRANSISTOR, 2
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 22978 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesQFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 12.75A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2.45 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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