Rochester Electronics / BSP125L6327HTSA1

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Type	Description
Series	SIPMOS®
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id	2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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