ROHM Semiconductor / SCT3160KW7TL

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Type	Description
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id	5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	398 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	100W
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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