STMicroelectronics / STQ1NC45R-AP

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Type	Description
Series	SuperMESH™
Package	Cut Tape (CT)Tape & Box (TB)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	450 V
Current - Continuous Drain (Id) @ 25°C	500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	160 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.1W (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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