Rochester Electronics / RJK60S7DPK-M0#T0

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	+30V, -20V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	227.2W (Ta)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-3PSG
Package / Case	TO-3P-3, SC-65-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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