Vishay / Siliconix / SIS606BDN-T1-GE3

Manufacturer Part Number: SIS606BDN-T1-GE3
Manufacturer: Vishay / Siliconix
Part of Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 1667 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the SIS606BDN-T1-GE3 Vishay / Siliconix on xunyun-ic.com, we are Vishay / Siliconix Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the SIS606BDN-T1-GE3 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Specification

TypeDescription
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1470 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

Top