Vishay / Siliconix / SIS776DN-T1-GE3

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Type	Description
Series	SkyFET®, TrenchFET®
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1360 pF @ 15 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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