Rochester Electronics / FDZ3N513ZT

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1.1A
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	462mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1 nC @ 4.5 V
Vgs (Max)	+5.5V, -300mV
Input Capacitance (Ciss) (Max) @ Vds	85 pF @ 15 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-WLCSP (1x1)
Package / Case	4-XFBGA, WLCSP

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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