Rochester Electronics / IRFHS8342TR2PBF

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-6
Package / Case	6-PowerVDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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