Rochester Electronics / NTMFS4833NAT1G

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 191A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 11.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	7.5 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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