Image is for reference, please contact us to get the real picture
Manufacturer Part Number: | FQA32N20C |
Manufacturer: | Rochester Electronics |
Part of Description: | POWER FIELD-EFFECT TRANSISTOR, 3 |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 35339 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | QFET® |
Package | Bulk |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 82mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2.22 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 204W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |